Key market opportunities exist in the rapid growth and deployment of advanced SiC and GaN power devices within new energy vehicles, driven by increasing sales of 800V+ architecture vehicles. The ...

TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...

A new silicon carbide (SiC) module built around 1,200 V MOSFETs targets demanding applications requiring bidirectional power flow or a broader range of control. That includes solar inverters as well ...

MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...

The high 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment, while 77% lower switching loss vs.

Power Integrations launches SCALE EV: automotive-qualified IGBT/SiC module driver family; targets bus, truck and con-ag EVs. (Graphic: Business Wire) SCALE EV board-level gate drivers incorporate two ...

Adoption of silicon carbide (SiC) is becoming more widespread among electric-vehicle (EV) systems such as dc-dc converters, traction inverters, and on-board chargers (OBCs) with bidirectional ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...

Comparison between DOT-247 and Discrete Products Two topologies offered in standardized 2-in-1 modules: half-bridge and common-source, offering increased flexibility. The DOT-247’s unique dual TO-247 ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...