These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In ...

Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...

An expanded line of APTxxxxxxx diode modules offers 35 full-bridge devices in SOT227 packages. They range from 6 to 100 A with voltages from 45 to 1,700 V. The SiC diode modules are available with ...

A stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by one-fold, SiC power modules allow for ...

The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...

For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...

MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...

The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) ...