Infineon Technologies AG has announced two new LDMOS RF power transistors targeting wireless infrastructure applications, such as WiMAX, in the 2.5 GHz-to-2.7 GHz frequency band. These products, which ...
Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile base stations to build smaller, more powerful and more ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications
New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications with Industry-Best Peak Output Power Infineon Technologies AG (IFX: FSE, NYSE), a leading supplier ...
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