TOKYO, Dec 10, 2020 - (JCN Newswire) - - Silicon carbide epitaxial wafers (SiC epi-wafers), the main material for power semiconductors, with a diameter of six inches (150mm) and manufactured by Showa ...

The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...

Wolfspeed’s 300mm platform will unify high-volume silicon carbide manufacturing for power electronics with advanced ...

V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.

Six 2300-V baseplate-less power modules from Wolfspeed boost energy efficiency in renewable energy, energy storage, and fast charging applications. These half-bridge modules, optimized for 1500-V DC ...

Innovative 2300V modules utilize 200mm silicon carbide technology to deliver energy efficiency for various applications, including renewable energy, energy storage, and high-capacity fast-charging ...

SemiQ expands its 1200-V Gen3 SiC MOSFET family with SOT-227 modules offering on-resistance values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS models are co-packaged with a Schottky barrier diode (SBD), while ...

Renesas and Wolfspeed announced on July 5 the execution of a wafer supply agreement and US$2 billion deposit by Renesas to secure a 10 year supply commitment of silicon carbide (SiC) bare and ...

Wolfspeed holds a key SiC position with OEM ties and IP, priced at ~8x sales as a 200mm ramp, utilization, and margins remain ...

Dublin, Dec. 16, 2025 (GLOBE NEWSWIRE) -- The "The Global Power Electronics Market 2026-2036" has been added to ResearchAndMarkets.com's offering. Power electronics is no longer confined to specialist ...

Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today unveiled a silicon carbide module designed to transform the renewable energy, energy storage, and high-capacity ...