Toshiba is test-sampling shipments of the TW007D120E, 1,200V trench-gate SiC mosfet primarily intended for power supply ...
Cree, Inc. releases the industry's first fully qualified SiC MOSFET power devices in "bare die" or chip form for use in power electronics modules. Cree's SiC Z-FET MOSFETs and diodes are used in ...
Find a downloadable version of this story in pdf format at the end of the story. Cree, Inc. has gained the distinction of producing the industry's first fully-qualified, commercial silicon carbide ...
A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
Advanced Linear Devices Inc. (ALD) has expanded its Supercapacitor Auto-Balancing (SAB) MOSFET family with the introduction of the ALD910030 dual MOSFET. Claiming unmatched auto-balancing capabilities ...
The AOTL037V60DE2, a 600V mosfet from Alpha and Omega Semiconductor (AOS), is its first high-voltage product to use the company’s αMOS E2 600V Super Junction MOSFET platform. Addressing high ...
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