Business Insider

Vishay Intertechnology 1200 V SiC MOSFET Power Modules in MAACPAK PressFit Package Increase Efficiency and Reliability

MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
Electronic Design

New Power Module Integrates SiC MOSFETs and IGBTs to Cut EV Costs

Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
EDN

SiC power modules gain low-resistance options

SemiQ expands its 1200-V Gen3 SiC MOSFET family with SOT-227 modules offering on-resistance values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS models are co-packaged with a Schottky barrier diode (SBD), while ...
Business Wire

Wolfspeed Launches 1200V Silicon Carbide Six-Pack Power Modules, Enabling a New Standard of Performance for E-Mobility Propulsion Systems

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc., a global leader in silicon carbide technology, today announced its new 1200V SiC six-pack power modules that redefine performance benchmarks for ...
Electronic Design

1,200-V Gen3 SiC MOSFET Modules Boost Reliability, Lower On-Resistance

SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...
EDN

100-A dual SiC MOSFET modules operate from –40° to 200°C

The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, well beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge ...