STMicroelectronics has created its first galvanically isolated gate driver for GaN transistors. Called STGAP2GS the wide body SO-8W packaged single-channel driver can work with rails up to 1.2kV. The ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Usually, an IGBT (Insulated Gate Bipolar Transistor) is described in the following way: “An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...

Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

A transistor – a word blend of "transfer" and "resistor" – is a fundamental component of today's advanced electronics. Essentially, a transistor, as one of the foundational elements of modern ...