Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...

The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...

Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.

Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...

The market is poised for growth driven by increased EV demand, AI-enhanced motor control, renewable energy expansion, and SiC ...

Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...

Advanced Power Technology Europe has added 100-V MOSFET modules to the existing product range in SP3, SP4 and SP6 packages. These modules are offered in single-switch, buck, boost, dual-common source, ...

The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, targeting automotive, energy, industrial, and telecom systems. The ...

IXYS Colorado announced its new series, the IXZ631, an integrated high-speed gate driver and MOSFET RF modules featuring very low insertion inductance and isolated substrate. The product is designed ...

Advanced Power Technology Europe has announced the addition of 1000-V and 1200-V MOSFET modules to the existing product range in SP4 and SP6 packages. These modules are offered in single switch, buck, ...