Samsung and SK Hynix have continued their head-to-head battle in the NAND flash memory market with the latter taking the lead with a new launch. SK Hynix, the world’s second-largest memory chipmaker, ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO: 6502) today announced development of the world’s first 48-layer *1 three dimensional stacked cell structure flash memory *2 called BiCS, a 2-bit-per ...
It was around 10 months ago when SK hynix announced the development of 238-layer triple-level cell (TLC) NAND flash memory, which it markets as "4D" technology, and now it has entered the mass ...
SANTA CLARA, Calif.--(BUSINESS WIRE)--Western Digital Corp. (NASDAQ: WDC), a global data storage technology and solutions leader, today announced that it has received the Flash Memory Summit ‘Best of ...
Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...
Check out more coverage of the 2022 Flash Memory Summit. Micron has started mass production of its most advanced triple-level-cell (TLC) 3D NAND chips made up of 232 layers of memory cells, pulling ...