NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global semiconductor ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the ...
TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...
NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...
Artificial intelligence computing startup D-Matrix Corp. said today it has developed a new implementation of 3D dynamic random-access memory technology that promises to accelerate inference workloads ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...