TORRANCE, Calif., Dec. 01, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) ...
Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...
In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs. Save my User ID and Password Some subscribers prefer to save their log-in information so they do ...
Navitas Announces 3300V and 2300V UHV Silicon Carbide Product Portfolio, Augmenting Reliability and Performance in Mission-Critical Energy Infrastructure Applications New 3300V and 2300V SiC products ...
These 3300V and 2300V UHV devices are based on Navitas’ fourth-generation GeneSiC™ platform which uses a TAP architecture to implement a multi-step e-field management profile that significantly ...
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